Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
R Kudrawiec, M Syperek, P Poloczek… - Journal of Applied …, 2009 - pubs.aip.org
The carrier localization phenomenon has been investigated for GaBiAs by photomodulated
transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a …
transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a …
The role of optical rectification in the generation of terahertz radiation from GaBiAs
K Radhanpura, S Hargreaves, RA Lewis… - Applied Physics …, 2009 - pubs.aip.org
We report on a detailed study of the emission of terahertz-frequency electromagnetic
radiation from layers of GaBi y As 1− y (0≤ y< 0.04) grown by molecular beam epitaxy on …
radiation from layers of GaBi y As 1− y (0≤ y< 0.04) grown by molecular beam epitaxy on …
Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1) B GaAs substrates
R Kudrawiec, P Poloczek, J Misiewicz, M Shafi… - Microelectronics …, 2009 - Elsevier
In this work, photomodulated transmittance (PT) has been applied to investigate the energy
gap of GaBiAs layers grown on (001) and (311) B GaAs substrates. In PT spectra, a clear …
gap of GaBiAs layers grown on (001) and (311) B GaAs substrates. In PT spectra, a clear …