The light-emission rate of a single quantum dot can be drastically enhanced by embedding it
in a resonant semiconductor microcavity. This phenomenon is known as the Purcell effect …

We investigate the effect of p doping on the luminescence properties of InAs/GaAs self-
assembled quantum dots (QDs). Continuous-wave and time-resolved photoluminescence …

A self-consistent rate equation model is presented to investigate the influence of carrier
relaxation on the modulation response of 1.3 μ m InAs–GaAs quantum dot lasers. In this …

Four types of self-assembled InAs/GaAs quantum dots (QDs) were grown by molecular
beam epitaxy and studied via temperature-dependent and time-resolved …

A systematic investigation of the temperature characteristics of quantum dot lasers emitting
at 1.3 μ m is reported. The temperature dependence of carrier lifetime, radiative efficiency …

To explore the capture dynamics of photoexcited carriers in semiconductor quantum posts,
optical pump terahertz (THz) probe and time-resolved photoluminescence spectroscopy …

Photoluminescence spectra of single InAs/GaAs quantum dot are obtained on the crude
surface of several low-dot-density samples, using a pinhole placed in the beam path …

L'électrodynamique quantique en cavité (EDQC) étudie l'interaction matière rayonnement à
son niveau le plus fondamental, ie lorque la matière est bien décrite par un système à deux …

Single photon sources are of extreme interest for future quantum communications networks.
Several realizations of such sources where proposed but none of them corresponds to the …

In contradiction to the theoretical prediction, the characteristics of the quantum dots are
thermally unstable in the relatively high temperature regime. This article briefly summaries …