Compact Hierarchical Bipolar Transistor Modeling With HiCUM | International Series on
Advances in Solid State Electronics and Technology World Scientific Search This Book …

“Extreme environment” electronics represent an important niche market in the trillion dollar
global electronics industry and span the operation of electronic circuits and systems in …

A reference voltage circuit which is less dependent on semiconductor process variations
compared to bandgap based reference voltage circuits. The circuit comprises a first amplifier …

The effect of ionizing radiation on the characteristics of silicon-germanium microwave ICs
has been experimentally studied. Radiation tolerance criteria have been established and …

Techniques for the design of passive elements for monolithic silicon-germanium microwave
ICs, tolerant to ionizing radiation have been developed with regard to specific features of the …

A production released complementary-SiGe BiCMOS technology on SOI has been
developed for high speed analog and RFIC applications. It features matched SiGe: C PNP …

Представлены результаты экспериментальных исследований влияния ионизирующих
излучений на характеристики кремний-германиевых СВЧ ИС. Установлены параметры …

We investigate, for the first time, the feasibility of operating silicon-germanium (SiGe)
heterojunction bipolar transistors (HBTs) in a weakly saturated bias regime to enable …

Crystalline oxides on Si with tailored electronic and crystallographic properties are of
importance for the integration of functional oxides or alternative semiconductors to enable …

A low noise voltage reference circuit is described. The reference circuit utilizes a bandgap
reference component and may include at least one of a current shunt or filter to reduce high …