A novel method to fabricate silica nanotubes based on phase separation effect
Silica nanotubes were fabricated via single-nozzle electrospinning based on phase
separation effect. TEM and SEM results showed that the diameter of silica nanotubes ranged …
separation effect. TEM and SEM results showed that the diameter of silica nanotubes ranged …
Structure and luminescence evolution of annealed Europium-doped silicon oxides films
D Li, X Zhang, L Jin, D Yang - Optics express, 2010 - opg.optica.org
Europium (Eu)-doped silicon oxide films with Eu concentrations from 2.1 to 4.7 at.% were
deposited by electron beam evaporation. The Eu related luminescence from the films was …
deposited by electron beam evaporation. The Eu related luminescence from the films was …
FTIR, AFM and PL properties of thin SiOx films deposited by HFCVD
JA Luna-López, G García-Salgado… - Materials Science and …, 2010 - Elsevier
In order to have optoelectronic functions integrated in a single chip, it is very important to
obtain a silicon compatible material with an optimal photoluminescence response. The non …
obtain a silicon compatible material with an optimal photoluminescence response. The non …
DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films
Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal
oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were …
oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were …
Photoluminescence enhancement through silicon implantation on SRO-LPCVD films
A Morales-Sánchez, KM Leyva, M Aceves… - Materials Science and …, 2010 - Elsevier
Photoluminescence (PL) properties of thin and thick silicon-rich oxide (SRO) and silicon
implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure …
implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure …
Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors
AA Fernández, MA Mijares, AM Sánchez… - Journal of Applied …, 2010 - pubs.aip.org
Light emitting capacitors (LECs) based on silicon-rich oxide (SRO) were fabricated and its
electroluminescent (EL) characteristics studied. Thin SRO films with R 0= 30 were deposited …
electroluminescent (EL) characteristics studied. Thin SRO films with R 0= 30 were deposited …
Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique
This study reports on the investigation and characterization of the different emitting centers
within SiO 2 codoped by Er 3+ ions and silicon-excess. Erbium doped silicon-rich silicon …
within SiO 2 codoped by Er 3+ ions and silicon-excess. Erbium doped silicon-rich silicon …
Preparation of aligned ultra-long and diameter-controlled silicon oxide nanotubes by plasma enhanced chemical vapor deposition using electrospun PVP nanofiber …
Well-aligned and suspended polyvinyl pyrrolidone (PVP) nanofibers with 8 mm in length
were obtained by electrospinning. Using the aligned suspended PVP nanofibers array as …
were obtained by electrospinning. Using the aligned suspended PVP nanofibers array as …
Improved emission efficiency of electroluminescent device containing nc-Si/SiO2 multilayers by using nano-patterned substrate
Nanocrystalline Si/SiO_2 multilayers-based electroluminescent devices were prepared on
nano-patterned p-Si substrates which were fabricated by nano-sphere lithography …
nano-patterned p-Si substrates which were fabricated by nano-sphere lithography …
Gain analysis of optically-pumped Si nanocrystal waveguide amplifiers on silicon substrate
The SiO_2/SiO_x/SiO_2 strip-loaded waveguide on Si substrate with buried Si nanocrystals
(Si-ncs) in SiO_x layer is demonstrated to show the Si-nc dependent optical gain. The …
(Si-ncs) in SiO_x layer is demonstrated to show the Si-nc dependent optical gain. The …