[图书][B] Handbook of nanophysics: functional nanomaterials
KD Sattler - 2010 - taylorfrancis.com
Handbook of Nanophysics: Functional Nanomaterials illustrates the importance of tailoring
nanomaterials to achieve desired functions in applications. Each peer-reviewed chapter …
nanomaterials to achieve desired functions in applications. Each peer-reviewed chapter …
Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors
The authors report the InAs/InGaAs/GaAs/AlGaAs quantum dots-in-double-well (D-DWELL)
design, which has a lower strain per DWELL stack than the InAs/InGaAs/GaAs DWELLs …
design, which has a lower strain per DWELL stack than the InAs/InGaAs/GaAs DWELLs …
Five-band bias-selectable integrated quantum well detector in an npn architecture
G Ariyawansa, Y Aytac, AGU Perera, SG Matsik… - Applied Physics …, 2010 - pubs.aip.org
A detector with five bands covering visible to long-wave infrared is demonstrated using a
GaAs-based npn-architecture. The major elements are two back-to-back connected pin …
GaAs-based npn-architecture. The major elements are two back-to-back connected pin …
Electromagnetic modeling of outcoupling efficiency and light emission in near-infrared quantum dot light emitting devices
AE Farghal, S Wageh, AES Abou El-Azm - Progress In Electromagnetics …, 2010 - jpier.org
We report an analytical exciton emission model based on Green function for simulating the
radiation characteristics of near-infrared Quantum Dot-light emitting devices (QD-LEDs). In …
radiation characteristics of near-infrared Quantum Dot-light emitting devices (QD-LEDs). In …
[PDF][PDF] Photoluminescence of Indium Gallium Arsenide Quantum Dots and Dot Chains
A Jones - Brigham Young University Thesis, 2010 - Citeseer
Nanostructures such as quantum dots (QDs) and QD chains have received significant
attention because of their applications in quantum information technologies. This paper …
attention because of their applications in quantum information technologies. This paper …
Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga, In)(As, N)
R Gargallo Caballero - 2010 - oa.upm.es
This Thesis work is devoted to the development of infrared optoelectronic devices both
detectors and light emitters by MBE growth and characterization of quantum dot …
detectors and light emitters by MBE growth and characterization of quantum dot …
Optical transition and carrier relaxation in self-assembled InAs/GaAs quantum dots with InAlAs and InGaAs combination cap layer by resonant excitation
L Bian, Z Jin - Journal of Shanghai University (English Edition), 2010 - Springer
The photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) with
InAlAs/InGaAs combination cap layer grown by molecular beam epitaxy are studied under …
InAlAs/InGaAs combination cap layer grown by molecular beam epitaxy are studied under …