Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAsBi
We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs
1-x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …
1-x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …
Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique
S Nargelas, K Jarašiūnas, K Bertulis… - Applied Physics …, 2011 - pubs.aip.org
We applied a time-resolved transient grating technique for investigation of nonequilibrium
carrier dynamics in GaAs 1− x Bi x alloys with x= 0.025–0.063. The observed decrease in …
carrier dynamics in GaAs 1− x Bi x alloys with x= 0.025–0.063. The observed decrease in …