Infrared reflectance and transmission spectra in II-VI alloys and superlattices
Room temperature measurements of the far-infrared (FIR) reflectance spectra are reported
for the polar optical phonons in a series of bulk Cd x Zn 1− x Te (0≤ x≤ 1) and CdSe x Te …
for the polar optical phonons in a series of bulk Cd x Zn 1− x Te (0≤ x≤ 1) and CdSe x Te …
Reflectance spectrum of plasmon waveguide interband cascade lasers and observation of the Berreman effect
RT Hinkey, Z Tian, RQ Yang, TD Mishima… - Journal of Applied …, 2011 - pubs.aip.org
Noninvasive infrared reflectance measurements have been explored as a method for
studying the optical properties of Si-doped cladding layers of plasmon waveguide interband …
studying the optical properties of Si-doped cladding layers of plasmon waveguide interband …
[PDF][PDF] Optische eigenschaften von aluminium-galliumnitrid-halbleitern
M Röppischer - 2011 - depositonce.tu-berlin.de
In dieser Arbeit wurden grundlegende optische Eigenschaften von AlN, GaN und ihren
Mischkristallen vorgestellt und interpretiert. Spektrale Ellipsometrie in einem ausgedehnten …
Mischkristallen vorgestellt und interpretiert. Spektrale Ellipsometrie in einem ausgedehnten …
Origin of Berreman effect in GaN layers on sapphire substrates
Oblique incidence polarized IR reflectivity measurements of Metal Organic Chemical Vapor
Deposition (MOCVD) grown GaN epitaxial layers on sapphire are discussed in the context of …
Deposition (MOCVD) grown GaN epitaxial layers on sapphire are discussed in the context of …
AlN: phonon dispersion curves, phonon density of states, phonon frequencies, phonon eigenvectors
D Strauch - New Data and Updates for IV-IV, III-V, II-VI and I-VII …, 2011 - Springer
For the phonon dispersion curves and phonon density of states of wurtzite AlN from inelastic
x-ray scattering (IXS) of synchrotron radiation and from ab-initio density functional (DFT) …
x-ray scattering (IXS) of synchrotron radiation and from ab-initio density functional (DFT) …
Optical properties of aluminium-gallium-nitride semiconductors; Optische Eigenschaften von Aluminium-Galliumnitrid-Halbleitern
M Roeppischer - 2011 - osti.gov
In this work fundamental optical properties of AlN, GaN and their alloys are presented.
Spectroscopic ellipsometry from the near infrared (NIR) to the vacuum-ultraviolet (VUV) …
Spectroscopic ellipsometry from the near infrared (NIR) to the vacuum-ultraviolet (VUV) …
LO-plasmon modes in doped gallium arsenide/aluminum gallium arsenide superlattices
RA Rodgers - 2011 - search.proquest.com
A great deal of interest has emerged in recent years to design novel compound
semiconductor materials to fulfill the growing societal needs of efficient light sources …
semiconductor materials to fulfill the growing societal needs of efficient light sources …
Development of surface micromachined Aluminum Nitride air-bridges for piezoelectric MEMS/NEMS applications by Metal Organic Vapor Phase Epitaxy techniques
S Kuchibhatla - 2011 - researchrepository.wvu.edu
Group III-nitrides have attracted considerable attention for piezoelectric Micro/Nano
electromechanical (MEMS/NEMS) applications due to their excellent bio compatibility, well …
electromechanical (MEMS/NEMS) applications due to their excellent bio compatibility, well …
[引用][C] LO-plasmon modes in doped GaAs/AL [subcript x] Ga [subscript 1-x] As superlattices
RA Rodgers - 2011