The effect of Bi composition to the optical quality of GaAs1− xBix
GaAs 1− x Bi x alloys grown by molecular beam epitaxy for x up to 0.06 were studied by
photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x< …
photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x< …
Distribution of bismuth atoms in epitaxial GaAsBi
The distribution of Bi atoms in epitaxial GaAs (1− x) Bi x is analyzed through aberration-
corrected Z-contrast images. The relation between the atomic number and the intensity of …
corrected Z-contrast images. The relation between the atomic number and the intensity of …
Photoluminescence investigation of high quality GaAs1− xBix on GaAs
Photoluminescence (PL) of GaAs 0.97 Bi 0.03 alloy was measured over a wide range of
temperatures and excitation powers. Room temperature PL with peak wavelength of 1038 …
temperatures and excitation powers. Room temperature PL with peak wavelength of 1038 …
Contactless electroreflectance study of E and E+ ΔSO transitions in In0. 53Ga0. 47BixAs1− x alloys
R Kudrawiec, J Kopaczek, J Misiewicz… - Applied Physics …, 2011 - pubs.aip.org
Energies of E 0 and E 0+ Δ SO transitions in In 0.53 Ga 0.47 Bi x As 1− x alloys with 0< x≤
0.036 have been studied by contactless electroreflectance spectroscopy at room …
0.036 have been studied by contactless electroreflectance spectroscopy at room …
Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction
GaAsBi alloy was grown on (100) GaAs substrate by metalorganic vapour phase epitaxy.
GaAsBi film was elaborated with V/III ratio of 9.5, trimethyl bismuth molar flow rate of about …
GaAsBi film was elaborated with V/III ratio of 9.5, trimethyl bismuth molar flow rate of about …
Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy
A successful method to epitaxy GaAsBi layer on (001) GaAs substrate is proposed. During
growth, alternated trimethyl bismuth (TMBi) flows were used. These TMBi flashes were …
growth, alternated trimethyl bismuth (TMBi) flows were used. These TMBi flashes were …
Growth and transport properties of p-type GaNBi alloys
AX Levander, SV Novikov, Z Liliental-Weber… - Journal of Materials …, 2011 - cambridge.org
Thin films of GaNBi alloys with up to 12.5 at.% Bi were grown on sapphire using low-
temperature molecular beam epitaxy. The low growth temperature and incorporation of Bi …
temperature molecular beam epitaxy. The low growth temperature and incorporation of Bi …
Temperature‐insensitive photoluminescence emission wavelength in GaAs1–xBix/GaAs multiquantum wells
Y Tominaga, K Oe, M Yoshimoto - physica status solidi c, 2011 - Wiley Online Library
GaAs1–xBix/GaAs multiquantum wells (MQWs) were grown on GaAs substrate by molecular
beam epitaxy at a growth temperature of 350 ºC. The MQWs showed clear satellite peaks …
beam epitaxy at a growth temperature of 350 ºC. The MQWs showed clear satellite peaks …
[PDF][PDF] INVITED FEATURE PAPERS
AX Levander, SV Novikov, Z Liliental-Weber… - J. Mater …, 2011 - academia.edu
Thin films of GaNBi alloys with up to 12.5 at.% Bi were grown on sapphire using low-
temperature molecular beam epitaxy. The low growth temperature and incorporation of Bi …
temperature molecular beam epitaxy. The low growth temperature and incorporation of Bi …
Optical reflectance studies of GaAs1-xBix
J Steele, RA Lewis - Conference on Lasers and Electro-Optics …, 2011 - opg.optica.org
The doping of GaAs with small amounts of Bi has a profound effect on the properties of the
alloy, most notably in the reduction of the bandgap. Yet the optical properties of GaAs 1− x Bi …
alloy, most notably in the reduction of the bandgap. Yet the optical properties of GaAs 1− x Bi …