Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions
N Posseme, R Bouyssou, T Chevolleau… - Journal of Vacuum …, 2011 - pubs.aip.org
Metallic hard mask architecture becomes an integration of choice for an advanced back end
of the line interconnect technology node. However, one of the main integration issues is the …
of the line interconnect technology node. However, one of the main integration issues is the …
Etch characteristics of TiN/Al2O3 thin film by using a Cl2/Ar adaptive coupled plasma
JC Woo, SH Kim, CI Kim - Vacuum, 2011 - Elsevier
In this study, we carried out an investigation in the etching characteristics of TiN thin films in
a C12/Ar adaptive coupled plasma. The maximum etch rate of the TiN thin films was 768 …
a C12/Ar adaptive coupled plasma. The maximum etch rate of the TiN thin films was 768 …
Etch Characterization of TiO2 Thin Films Using Metal–Insulator–Metal Capacitor in Adaptively Coupled Plasma
JC Woo, YH Joo, CI Kim - Japanese Journal of Applied Physics, 2011 - iopscience.iop.org
In this work, we investigated the etching characteristics of TiO 2, and SiO 2 thin films and the
selectivity of TiO 2 to SiO 2 in a CF 4/Ar adaptively coupled plasma (ACP) system. The …
selectivity of TiO 2 to SiO 2 in a CF 4/Ar adaptively coupled plasma (ACP) system. The …
[图书][B] Plasma interactions with masking materials for nanofabrication
FGC Weilnboeck - 2011 - search.proquest.com
Plasma-based transfer of patterns into other materials is a key process for production of
nano-scale devices used in micro-electronic technology. With the continuously decreasing …
nano-scale devices used in micro-electronic technology. With the continuously decreasing …