[PDF][PDF] Near-field optical properties of quantum dots, applications and perspectives
A Zora, GP Triberis, C Simserides - Recent Patents on …, 2011 - researchgate.net
Recent years have witnessed tremendous research in quantum dots as excellent models of
quantum physics at the nanoscale and as excellent candidates for various applications …
quantum physics at the nanoscale and as excellent candidates for various applications …
[PDF][PDF] Техника физического эксперимента в системах с пониженной размерностью
АВ Баранов, ГН Виноградова, ЮМ Воронин… - СПб.: СПбГУ …, 2011 - books.ifmo.ru
Лабораторный практикум предназначен для магистрантов второго курса факультета
Фотоники и оптоинформатики, обучающихся по магистерской программе 200700.68. 05 …
Фотоники и оптоинформатики, обучающихся по магистерской программе 200700.68. 05 …
[PDF][PDF] Radiative recombination mechanisms of large InAs/GaAs quantum dots
The optical properties of large InAs/GaAs quantum dots were investigated by low-
temperature photoluminescence as a function of the excitation-power density. The presence …
temperature photoluminescence as a function of the excitation-power density. The presence …
[PDF][PDF] Influence of Configuration Mixing on Energies and Recombination Dynamics of Excitonic States in CdTe/ZnTe Quantum Dots
We study experimentally and theoretically excitonic recombination processes in CdTe/ZnTe
quantum dots. The single quantum dot photoluminescence spectrum was observed and …
quantum dots. The single quantum dot photoluminescence spectrum was observed and …
披覆銻砷化鎵層之砷化銦量子點的載子動力學及能帶排列
許峰菖 - 交通大學電子物理系所學位論文, 2011 - airitilibrary.com
論文第一部分利用光激螢光光譜研究不同GaAs0. 8Sb0. 2 披覆厚度對於InAs
量子點的發光特性影響. 發現披覆層厚度的增加將造成發光能量紅移, 載子生命期變長及出現能 …
量子點的發光特性影響. 發現披覆層厚度的增加將造成發光能量紅移, 載子生命期變長及出現能 …
[HTML][HTML] Optical spectroscopy of InGaAs quantum dots
A Larsson - 2011 - diva-portal.org
The work presented in this thesis deals with optical studies of semiconductor quantum dots
(QDs) in the InGaAs material system. It is shown that for selfassembled InAs QDs, the …
(QDs) in the InGaAs material system. It is shown that for selfassembled InAs QDs, the …
Scanning near-field infrared microspectroscopy on semiconductor structures
R Jacob - 2011 - hzdr.qucosa.de
Abstract (EN) Near-field optical microscopy has attracted remarkable attention, as it is the
only technique that allows the investigation of local optical properties with a resolution far …
only technique that allows the investigation of local optical properties with a resolution far …
[图书][B] Optical study of coupling mechanisms in quantum dot-quantum well hybrid nanostructure
V Dorogan - 2011 - search.proquest.com
The interaction between nanostructures of different dimensionality, two-dimensional
quantum well (QW) and zero-dimensional quantum dots (QDs), has been studied by …
quantum well (QW) and zero-dimensional quantum dots (QDs), has been studied by …
[HTML][HTML] Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots
M Sandro, M Angelo EB, M Marcelo, Q Alain A… - World Journal of …, 2011 - scirp.org
The optical properties of large InAs/GaAs quantum dots were investigated by low-
temperature photoluminescence as a function of the excitation-power density. The presence …
temperature photoluminescence as a function of the excitation-power density. The presence …
Computational Study Of The Near Field Spontaneous Creation Of Photonic States Coupled To Few Level Systems
S Tafur - 2011 - stars.library.ucf.edu
Abstract Models of the spontaneous emission and absorption of photons coupled to the
electronic states of quantum dots, molecules, NV (single nitrogen vacancy) centers in …
electronic states of quantum dots, molecules, NV (single nitrogen vacancy) centers in …