[HTML][HTML] Transport in graphene nanostructures

C Stampfer, S Fringes, J Güttinger, F Molitor, C Volk… - Frontiers of …, 2011 - Springer
Graphene nanostructures are promising candidates for future nanoelectronics and solid-
state quantum information technology. In this review we provide an overview of a number of …

Compositional mapping of semiconductor quantum dots and rings

G Biasiol, S Heun - Physics Reports, 2011 - Elsevier
In this article we review the extensive experimental work on the compositional mapping of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …

Helical quantum states in HgTe quantum dots with inverted band structures

K Chang, WK Lou - Physical review letters, 2011 - APS
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted
band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum …

InGaN quantum dot growth in the limits of Stranski–Krastanov and spinodal decomposition

S Figge, C Tessarek, T Aschenbrenner… - physica status solidi …, 2011 - Wiley Online Library
Most commonly used for the self‐assembling of InGaN quantum dots is a Stranski–
Krastanov growth scheme. Often neglected is the influence of spinodal decomposition …

Exciton relaxation and coupling dynamics in a GaAs/AlGaAs quantum well and quantum dot ensemble

G Moody, ME Siemens, AD Bristow, X Dai, AS Bracker… - Physical Review B, 2011 - APS
Exciton inter-and intra-actions in a GaAs/AlGaAs quantum well (QW) and quantum dot (QD)
ensemble are studied using optical two-dimensional Fourier transform spectroscopy. We …

Lasing properties of InP/(GaIn)P quantum dots in microdisk cavities

M Witzany, R Roßbach, WM Schulz, M Jetter, P Michler… - Physical Review B, 2011 - APS
We investigated the photoluminescence from InP quantum dots incorporated in (Ga 0.51 In
0.49) P microdisk structures. With increasing pump power we observe a transition to …

InP/AlGaInP quantum dot laser emitting at 638 nm

WM Schulz, M Eichfelder, R Roßbach, M Jetter… - Journal of crystal …, 2011 - Elsevier
We demonstrate electrically pumped laser light emission in the visible (red) spectral range
using self-assembled InP quantum dots embedded in an (AlxGa1− x) 0.51 In0. 49P matrix …

Anomalous strain profiles and electronic structures of a GaAs-capped InAs/In0. 53Ga0. 47As quantum ring

P Moon, W Jun, K Park, E Yoon, JD Lee - Journal of Applied Physics, 2011 - pubs.aip.org
We investigate the strain profiles and electronic structures of a novel quantum ring capped
by a material different from the substrate. By comparing the novel quantum ring with an …

Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions

E Cohen, N Elfassy, G Koplovitz, S Yochelis… - Sensors, 2011 - mdpi.com
In recent years, epitaxial growth of self-assembled quantum dots has offered a way to
incorporate new properties into existing solid state devices. Although the droplet …

一维有机微纳米光功能材料研究进展

崔秋红, 赵永生, 姚建年 - 中国科学: 化学, 2011 - cqvip.com
近年来, 一维有机小分子微纳材料因为其新颖的光学性能和在未来小型化器件中的广泛应用,
受到了人们越来越多的关注. 相比于传统无机半导体材料, 有机小分子材料具有结构多样性 …