Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation
We demonstrate a regrowth-free material platform to create monolithic InGaAsP/InP photonic
integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL …
integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL …
Fabrication of F-ion implanted quantum well intermixed waveguide grating
RK Sonkar, U Das - 2012 Photonics Global Conference (PGC), 2012 - ieeexplore.ieee.org
This paper reports the ion implantation induced quantum well intermixing used to fabricate
waveguide gratings for applications at CWDM wavelengths on InGaAsP/InP multi quantum …
waveguide gratings for applications at CWDM wavelengths on InGaAsP/InP multi quantum …
Analysis of using femtosecond laser scanning system to impurity-induced disordering of InGaAsP quantum wells
This study is the first to demonstrate the selectivity quantum well intermixing process by
using a femtosecond laser scanning-induced disordering technique. The advantages of the …
using a femtosecond laser scanning-induced disordering technique. The advantages of the …
Metal-clad photonic crystal membrane nanolasers
JD Sulkin, KD Choquette - 2012 International Conference on …, 2012 - ieeexplore.ieee.org
We report laterally injected photonic crystal membrane light emitters that are clad on one
surface by metal. Light emission from an electrically injected photonic crystal defect cavity is …
surface by metal. Light emission from an electrically injected photonic crystal defect cavity is …