Carrier dynamics in type-II GaAsSb/GaAs quantum wells
Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum
wells are presented. The PL kinetics are determined by the dynamic band bending effect …
wells are presented. The PL kinetics are determined by the dynamic band bending effect …
Temperature dependence of E and E+ ΔSO transitions in In0. 53Ga0. 47BixAs1− x alloys studied by photoreflectance
R Kudrawiec, J Kopaczek, J Misiewicz… - Journal of Applied …, 2012 - pubs.aip.org
The temperature dependence of the energy gap (E 0) and the spin-orbit split (E 0+ Δ SO)
transitions has been studied by photoreflectance for In 0.53 Ga 0.47 Bi x As 1-x layers with …
transitions has been studied by photoreflectance for In 0.53 Ga 0.47 Bi x As 1-x layers with …