Consideration of particle-strengthening mechanism of copper-precipitation-strengthened steels by atom probe tomography analysis
J Takahashi, K Kawakami, Y Kobayashi - Materials Science and …, 2012 - Elsevier
Atom probe tomography (APT) analysis of copper-strengthened steels was performed to
elucidate the strengthening mechanism due to precipitated copper particles. The …
elucidate the strengthening mechanism due to precipitated copper particles. The …
The mechanism of climb in dislocation–nanovoid interaction
Techniques of atomistic simulation have been employed to determine the mechanism of the
newly observed process of climb of a dislocation line during depinning at a nanosized void …
newly observed process of climb of a dislocation line during depinning at a nanosized void …
Modeling of radiation hardening in ferritic/martensitic steel using multi-scale approach
NN Kumar, PV Durgaprasad, BK Dutta… - Computational materials …, 2012 - Elsevier
Fe–Cr based ferritic/martensitic (FM) steels are the candidate structural materials for future
fusion reactors. In this work, a multi-scale approach comprising atomistic and dislocation …
fusion reactors. In this work, a multi-scale approach comprising atomistic and dislocation …
[PDF][PDF] Atomic-level level dislocation dynamics in irradiated metals
YN Osetsky, DJ Bacon - Comprehens. Nucl. Mater, 2012 - researchgate.net
MBP many-body potential MC Monte Carlo MD molecular dynamics MMM multiscale
materials modeling MS molecular statics m Poisson's ratio PAD periodic array of …
materials modeling MS molecular statics m Poisson's ratio PAD periodic array of …
A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire
P Ravadgar, RH Horng, SL Ou - Applied Physics Letters, 2012 - pubs.aip.org
A clear visualization of the origin and characteristics of threading dislocations (TDs) of GaN-
based light emitting diode epitaxial layers on (0001) sapphire substrates have been carried …
based light emitting diode epitaxial layers on (0001) sapphire substrates have been carried …
[引用][C] Study of Dislocation Climb at Nanovoids in BCC Metal
M Bhattacharya, A Dutta, A Giri… - Supplemental …, 2012 - Wiley Online Library
Study of Dislocation Climb at Nanovoids in BCC Metal Page 1 Supplemental Proceedings:
Volume 2: Materials Properties, Characterization, and Modeling TMS (The Minerals, Metals & …
Volume 2: Materials Properties, Characterization, and Modeling TMS (The Minerals, Metals & …