InP nanocrystals on silicon for optoelectronic applications

S Prucnal, S Zhou, X Ou, H Reuther, MO Liedke… - …, 2012 - iopscience.iop.org
One of the solutions enabling performance progress, which can overcome the downsizing
limit in silicon technology, is the integration of different functional optoelectronic devices …

Guided-mode phonon-polaritons in suspended waveguides

SA Holmstrom, TH Stievater, MW Pruessner… - Physical Review B …, 2012 - APS
We report on the characterization of two-dimensionally confined phonon-polaritons at
terahertz frequencies in suspended waveguides using Raman scattering. The cross …

Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra

E Tiras, M Tanisli, N Balkan, S Ardali… - … status solidi (b), 2012 - Wiley Online Library
The vibrational properties of InN samples grown by molecular beam epitaxy (MBE)
technique have been studied using infrared (IR) and Raman scattering spectroscopy at …

Raman spectroscopy of compound semiconductors

J Ibánez, R Cuscó - Semiconductor Research: Experimental Techniques, 2012 - Springer
Raman spectroscopy has become a widely used characterization tool in today's
semiconductor research. In this chapter, we provide an introductory background to the …

Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Raman-scattering measurements

E Tiras - Journal of Optoelectronics and Advanced Materials, 2012 - avesis.anadolu.edu.tr
The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic
chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon …

Development of a prototype photoacoustic microscope and spectroscope and advanced semiconductor material characterization

L Xu - 2012 - doras.dcu.ie
The thesis can be divided into two parts. In the first part of my thesis, I present the design,
construction and test results of a prototype gas-cell Photoacoustic (PA) Spectrometer and …