Demonstration of an electrically functional 34 nm metal pitch interconnect in ultralow-k ILD using spacer-based pitch quartering
M Van Veenhuizen, G Allen, M Harmes… - 2012 IEEE …, 2012 - ieeexplore.ieee.org
The patterning of a 34 nm metal pitch interconnect was realized using a spacer-based pitch
quartering scheme. The pattern is transferred into an ultralow-k ILD using a process that …
quartering scheme. The pattern is transferred into an ultralow-k ILD using a process that …
Plasma Processing of Low‐k Dielectrics
This chapter is an overview of plasma processing used for fabrication of interconnect
structures for modern ULSI devices. The chapter contains four parts, including analysis of (1) …
structures for modern ULSI devices. The chapter contains four parts, including analysis of (1) …
Advances in metrology for the determination of Young's modulus for low-k dielectric thin films
As the semiconductor nano-electronics industry progresses toward incorporating
increasingly lower dielectric constant materials as the inter layer dielectric (ILD) in Cu …
increasingly lower dielectric constant materials as the inter layer dielectric (ILD) in Cu …
[图书][B] Collective instability of micro-and nanoscale structures
Z Chen - 2012 - search.proquest.com
Engineering objects or systems with a very small size in dimension can have strikingly
different mechanical properties from their bulk counterparts found in our everyday lives …
different mechanical properties from their bulk counterparts found in our everyday lives …