Electronic and optical properties of semiconductor and graphene quantum dots

W Sheng, M Korkusinski, AD Güçlü, M Zielinski… - Frontiers of …, 2012 - Springer
Our recent work on the electronic and optical properties of semiconductor and graphene
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …

Microscopic theory of phonon-induced effects on semiconductor quantum dot decay dynamics in cavity QED

P Kaer, TR Nielsen, P Lodahl, AP Jauho, J Mørk - Physical Review B, 2012 - APS
We investigate the influence of the electron-phonon interaction on the decay dynamics of a
quantum dot coupled to an optical microcavity. We show that the electron-phonon interaction …

Carrier trapping and luminescence polarization in quantum dashes

A Musiał, P Kaczmarkiewicz, G Sęk, P Podemski… - Physical Review B, 2012 - APS
We study experimentally and theoretically polarization-dependent luminescence from an
ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy …

Shape transitions in excited states of two-electron quantum dots in a magnetic field

RG Nazmitdinov, NS Simonović… - Journal of Physics B …, 2012 - iopscience.iop.org
We use entanglement to study shape transitions in two-electron axially symmetric parabolic
quantum dots in a perpendicular magnetic field. At a specific magnetic field value the dot …

Phonon-assisted relaxation between hole states in quantum dot molecules

K Gawarecki, P Machnikowski - Physical Review B, 2012 - APS
We study theoretically phonon-assisted relaxation and inelastic tunneling of holes in a
double quantum dot. We derive hole states and relaxation rates from k· p Hamiltonians and …

Adiabatic description of nonspherical quantum dot models

AA Gusev, O Chuluunbaatar, SI Vinitsky… - Physics of Atomic …, 2012 - Springer
Within the effective mass approximation an adiabatic description of spheroidal and dumbbell
quantum dot models in the regime of strong dimensional quantization is presented using the …

Electronic and optical properties of non-uniformly shaped InAs/InP quantum dashes

P Kaczmarkiewicz… - … Science and Technology, 2012 - iopscience.iop.org
We theoretically study the optical properties and the electronic structure of highly elongated
InAs/InP quantum dots (quantum dashes) and show how carrier trapping due to geometrical …

Theory of optical properties of II-VI semiconductor quantum dots containing a single magnetic ion in a strong magnetic field

AH Trojnar, M Korkusiński, M Potemski, P Hawrylak - Physical Review B, 2012 - APS
We present a microscopic theory of the magnetic field dependence of the optical properties
of II–VI semiconductor quantum dots containing a single magnetic (Mn) impurity. The single …

Effects of hydrostatic pressure, temperature, electric field and aluminum concentration on the electronic states in GaAs/Ga1− xAlxAs concentric double quantum rings

HM Baghramyan, MG Barseghyan… - Journal of Physics …, 2012 - iopscience.iop.org
Using the effective mass approximation and transfer matrix formalism the ground state
energy of an electron in GaAs/Ga 1− x Al x As concentric double quantum rings is calculated …

[PDF][PDF] Nonlinear gain dynamics of quantum dot semiconductor optical amplifiers

N Majer - 2012 - depositonce.tu-berlin.de
In this work the nonlinear gain dynamics of electrically injected quantum dot semiconductor
optical amplifiers is investigated. At first the semiclassical modeling ansatz on the basis of …