Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch
F Weilnboeck, E Bartis, S Shachar… - Journal of Vacuum …, 2012 - pubs.aip.org
Metallic masking materials are promising candidates for plasma-based pattern transfer into
low-k materials for fabricating integrated circuits. Improving etching selectivity (ES) between …
low-k materials for fabricating integrated circuits. Improving etching selectivity (ES) between …
Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch
F Weilnboeck, E Bartis, S Shachar… - Journal of Vacuum …, 2012 - pubs.aip.org
The authors studied the behavior of Ti hardmasks in CF 4/Ar and C 4 F 8/Ar discharges
using conditions relevant to pattern transfer processes into organosilicate glass (OSG), a …
using conditions relevant to pattern transfer processes into organosilicate glass (OSG), a …
[PDF][PDF] BCl3/He 유도결합플라즈마를이용한TiN 박막의식각특성
주영희， 우종창， 김창일 - 전기전자재료학회논문지(J. Korean Inst …, 2012 - academia.edu
We investigated the dry etching characteristics of TiN in TiN/Al2O3 gate stack using a
inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching …
inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching …
Dry Etching Characteristics of TiN Thin Films in BCl3/He Inductively Coupled Plasma
YH Joo, JC Woo, CI Kim - Journal of the Korean Institute of …, 2012 - koreascience.kr
We investigated the dry etching characteristics of TiN in $ TiN/Al_2O_3 $ gate stack using a
inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching …
inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching …