Topological materials

B Yan, SC Zhang - Reports on Progress in Physics, 2012 - iopscience.iop.org
Recently, topological insulator materials have been theoretically predicted and
experimentally observed in both 2D and 3D systems. We first review the basic models and …

Transport in three-dimensional topological insulators: Theory and experiment

D Culcer - Physica E: Low-dimensional Systems and …, 2012 - Elsevier
This paper reviews recent theoretical and experimental work on transport due to the surface
states of three-dimensional topological insulators. The theoretical focus is on longitudinal …

Ultra-short pulse generation by a topological insulator based saturable absorber

C Zhao, H Zhang, X Qi, Y Chen, Z Wang, S Wen… - Applied Physics …, 2012 - pubs.aip.org
Under strong laser radiation, a Dirac material, the topological insulator (TI) Bi 2 Te 3, exhibits
an optical transmittance increase as a result of saturable absorption. Based on an open …

The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films

MX Wang, C Liu, JP Xu, F Yang, L Miao, MY Yao… - Science, 2012 - science.org
Three-dimensional topological insulators (TIs) are characterized by their nontrivial surface
states, in which electrons have their spin locked at a right angle to their momentum under …

Wavelength-tunable picosecond soliton fiber laser with Topological Insulator: Bi2Se3 as a mode locker

C Zhao, Y Zou, Y Chen, Z Wang, S Lu, H Zhang… - Optics express, 2012 - opg.optica.org
Based on the open-aperture Z-scan measurement, we firstly uncovered the saturable
absorption property of the topological insulator (TI): Bi_2Se_3. A high absolute modulation …

Hedgehog spin texture and Berry's phase tuning in a magnetic topological insulator

SY Xu, M Neupane, C Liu, D Zhang, A Richardella… - Nature Physics, 2012 - nature.com
Understanding and control of spin degrees of freedom on the surfaces of topological
materials are key to future applications as well as for realizing novel physics such as the …

Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates

SL Li, H Miyazaki, H Song, H Kuramochi, S Nakaharai… - ACS …, 2012 - ACS Publications
We demonstrate the possibility in quantifying the Raman intensities for both specimen and
substrate layers in a common stacked experimental configuration and, consequently …

Manifestation of Topological Protection in Transport Properties of Epitaxial Thin Films

AA Taskin, S Sasaki, K Segawa, Y Ando - Physical review letters, 2012 - APS
The massless Dirac fermions residing on the surface of three-dimensional topological
insulators are protected from backscattering and cannot be localized by disorder, but such …

Thickness-Independent Transport Channels in Topological Insulator Thin Films

N Bansal, YS Kim, M Brahlek, E Edrey, S Oh - Physical review letters, 2012 - APS
With high quality topological insulator Bi 2 Se 3 thin films, we report thickness-independent
transport properties over wide thickness ranges. Conductance remained nominally constant …

Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator

M Liu, J Zhang, CZ Chang, Z Zhang, X Feng, K Li… - Physical review …, 2012 - APS
We report transport studies on magnetically doped Bi 2 Se 3 topological insulator ultrathin
films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a …