This paper presents a rigorous and comprehensive nonlinear circuit-theoretic foundation for
the memristive Hodgkin–Huxley Axon Circuit model. We show that the Hodgkin–Huxley …

This tutorial clarifies the axiomatic definition of (#FF0000v^#000000(#FF0000α#000000)#
000000,#FF0000i^#000000(#FF0000β#000000)#000000) circuit elements via a lookup …

A report is presented on the operation of an analogue programming circuit for accurately
setting the state of a memristor. The circuit exploits the dynamic modulation of resistance …

The memristor (short for memory resistor) is a yet quite unknown circuit element, though
equally fundamental as resistors, capacitors, and coils. It was predicted from theory …

Among the wide variety of electron devices and systems that exhibit pinched hysteresis
current-voltage (IV) characteristics, those associated with filamentary-like conduction have …

In this paper, we investigate the AC performance of a variable gain amplifier that utilizes an
in-house manufactured memristor as a gain setting element. Analysis includes frequency …

Recently, the applications of memristors have spread into many fields and especially in the
circuit theory. Many models have been proposed for the HP-memristor based on the window …

Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both
unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a …

The IEEE Technology Time Machine (TTM) is a unique event for industry leaders,
academics, and decision making government officials who direct R&D activities, plan …

Abstract Praseodymium Calcium Manganite (Pr0. 7Ca0. 3MnO3) shows a p-type
semiconducting behaviour and is a paramagnetic insulator at room temperature. In the …