Changes in the ion flux and the time-averaged ion distribution functions are reported for
pulsed, inductively coupled RF plasmas (ICPs) operated over a range of duty cycles. For …

Plasma etching has been a key driver of miniaturization technologies toward smaller and
more powerful devices in the semiconductor industry. Thin layers involved in complex stacks …

HBr plasma treatments are widely used in nanoscale lithographic technologies to increase
the plasma etch resistance of 193 nm photoresist masks as well as to decrease their Line …

The effect of magnetic filtering on the electron energy distribution function is studied in an
inductive discharge with internal coil coupling. The coil is placed inside the plasma and …

A breadth of advanced manufacturing technologies utilize plasma based material
processing. A central system to plasma processing schemes is the RF power delivery and …

Silicon atomic layer etching (ALET) using Cl 2 is applied to remove the damaged layer on a
30 nm contact silicon surface formed by high-energy reactive ions during high aspect ratio …

Dry-etch tool preparation, which is critical to ensuring reproducible etch conditions, is
particularly important in multiple-user, multiple-process-tool settings. A reproducible dry-etch …

The time evolution of ion energy distributions (IEDs) during the afterglow is measured in
various inert gas plasmas generated by an inductively coupled plasma source. The …

A new type of plasma source (RLSA TM) is described to generate low temperature plasma in
the wafer region. The low T e characteristic arises from decoupling of wafer region palsma …

Je tiens à remercier en premier lieu Monsieur Khaled Hassouni, Professeur à l'université
Paris 13 et directeur du LSPM de m'avoir accueilli au sein de son laboratoire, de m'avoir …