Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance
J Kopaczek, R Kudrawiec, WM Linhart… - Applied Physics …, 2013 - pubs.aip.org
GaSb 1− x Bi x layers with 0< x≤ 0.042 have been studied by photoreflectance in 15–290 K
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
MK Shakfa, D Kalincev, X Lu, SR Johnson… - Journal of Applied …, 2013 - pubs.aip.org
Localization effects on the optical properties of GaAs 1− x Bi x/GaAs single quantum wells
(SQWs), with Bi contents ranging from x= 1.1% to 6.0%, are investigated using continuous …
(SQWs), with Bi contents ranging from x= 1.1% to 6.0%, are investigated using continuous …
Quantitative estimation of density of Bi-induced localized states in GaAs1− xBix grown by molecular beam epitaxy
M Yoshimoto, M Itoh, Y Tominaga, K Oe - Journal of crystal growth, 2013 - Elsevier
The density of Bi-induced localized states in GaAs 1− x Bi x was evaluated by measuring the
photoluminescence (PL) properties of p-type MBE-grown GaAs 1− x Bi x with various doping …
photoluminescence (PL) properties of p-type MBE-grown GaAs 1− x Bi x with various doping …
Spin lifetime measurements in GaAsBi thin films
Photoluminescence spectroscopy and Hanle effect measurements are used to investigate
carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a …
carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a …
Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi‐induced acceptor states
The puzzling electronic and transport properties of the Ga (AsBi) alloy are investigated for a
wide range of Bi‐concentrations (x= 0–10.6%) by means of various experimental techniques …
wide range of Bi‐concentrations (x= 0–10.6%) by means of various experimental techniques …
Effect of Bismuth Alloying on the Transport Properties of the Dilute Bismide Alloy, GaAs1 − x Bi x
RN Kini, A Mascarenhas - Bismuth-Containing Compounds, 2013 - Springer
We studied the effect of Bi incorporation on the carrier mobilities and electron effective mass
in the dilute Bismide alloy, GaAs 1− x Bi x, using electrical transport and photoluminescence …
in the dilute Bismide alloy, GaAs 1− x Bi x, using electrical transport and photoluminescence …
Localized states in GaAsBi and GaAs/GaAsBi heterostructures
M Yoshimoto, T Fuyuki - Bismuth-Containing Compounds, 2013 - Springer
Deep-and shallow-level defects in device-quality GaAs 1− x Bi x (x≤ 10.9%) are
investigated. Despite low-temperature growth, GaAs 1− x Bi x emits intense band-edge …
investigated. Despite low-temperature growth, GaAs 1− x Bi x emits intense band-edge …
Nepusiausvirųjų krūvininkų dinamikos tyrimas sužadinimo-zondavimo metodikomis InN, InGaN, GaAsBi
S Nargelas - 2013 - epublications.vu.lt
Abstract [eng] The thesis is dedicated to investigation of carrier dynamics in InN, InGaN, and
GaAsBi heterostructures by using light-induced transient gratings and differential …
GaAsBi heterostructures by using light-induced transient gratings and differential …