Analysis of water adsorption in plasma-damaged porous low-k dielectric by controlled-atmosphere infrared spectroscopy
M Darnon, T Chevolleau, C Licitra, N Rochat… - Journal of Vacuum …, 2013 - pubs.aip.org
The integration of porous dielectric (low-k) in interconnects of integrated circuits is limited by
the damage induced by plasma processes to the porous material. Plasma-damaged …
the damage induced by plasma processes to the porous material. Plasma-damaged …
The Dry Etching Properties of HfAlO3 Thin Films over Si and SiO2 Using Inductively Coupled Plasma Source
JC Woo, YH Joo, CI Kim - Ferroelectrics, 2013 - Taylor & Francis
In this work, we investigated the etching characteristics of HfAlO3 thin films and the
selectivity of HfAlO3 to Si and SiO2 in a CF4/Ar inductively coupled plasma (ICP) system …
selectivity of HfAlO3 to Si and SiO2 in a CF4/Ar inductively coupled plasma (ICP) system …