Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing …
Vertically coupled, multilayered InAs/GaAs quantum dots (QDs) covered with thin InGaAs
strain-reducing layers (SRLs) are in demand for various technological applications. We …
strain-reducing layers (SRLs) are in demand for various technological applications. We …
Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties …
A Mandal, U Verma, S Chakrabarti - Superlattices and Microstructures, 2013 - Elsevier
Self-assembled InAs/GaAs multilayer quantum dots (MQDs) have been widely investigated
for their potential application in optoelectronic applications such as lasers and photovoltaic …
for their potential application in optoelectronic applications such as lasers and photovoltaic …
[PDF][PDF] 5.4 Spectroscopy of QRod-NWs.
R Anufriev - Optical Properties of InAs/InP Nanowire …, 2013 - researchgate.net
We proceed to the investigation of the optical properties of QRod-NWs. PL emission of the
QRod-NWs on the as-grown was studied as a function of the temperature from spectra 14 K …
QRod-NWs on the as-grown was studied as a function of the temperature from spectra 14 K …