A 1.2-V 8.3-nJ CMOS humidity sensor for RFID applications

Z Tan, R Daamen, A Humbert… - IEEE Journal of Solid …, 2013 - ieeexplore.ieee.org
This paper presents a fully integrated CMOS humidity sensor for a smart RFID sensor
platform. The sensing element is a CMOS-compatible capacitive humidity sensor, which …

A 0.008 500 /spl mu/W 469 kS/s Frequency-to-Digital Converter Based CMOS Temperature Sensor With Process Variation Compensation

S Hwang, J Koo, K Kim, H Lee… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
This paper presents a temperature sensor based on a frequency-to-digital converter with
digitally controlled process compensation. The proposed temperature sensor utilizes ring …

Low-Power CMOS Smart Temperature Sensor With a Batch-Calibrated Inaccuracy of From to 130

AL Aita, MAP Pertijs, KAA Makinwa… - IEEE Sensors …, 2013 - ieeexplore.ieee.org
In this paper, a low-power CMOS smart temperature sensor is presented. The temperature
information extracted using substrate PNP transistors is digitized with a resolution of 0.03 …

A process-variation-tolerant on-chip CMOS thermometer for auto temperature compensated self-refresh of low-power mobile DRAM

D Shim, H Jeong, H Lee, J Rhee… - IEEE journal of solid …, 2013 - ieeexplore.ieee.org
Smaller transistors mean that capacitors are charged less uniformly, which increases the self-
refresh current in the DRAMs used in mobile devices. Adaptive self-refresh using an on-chip …

An energy efficient time-domain temperature sensor for low-power on-chip thermal management

YJ An, K Ryu, DH Jung, SH Woo… - IEEE sensors journal, 2013 - ieeexplore.ieee.org
Because temperature variations significantly affect the performance and reliability of highly
integrated chips, the thermal management of such chips is an important issue. In this paper …

A micropower battery current sensor with±0.03%(3σ) inaccuracy from− 40 to+ 85 C

SH Shalmany, D Draxelmayr… - 2013 IEEE International …, 2013 - ieeexplore.ieee.org
This paper presents a micropower current-sensing system (CSS) for battery monitoring,
which consists of a calibrated shunt resistor, a ΔΣ ADC, and a dynamic bandgap reference …

A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated Relative Inaccuracy From to 105

L Lu, ST Block, DE Duarte, C Li - IEEE Transactions on Circuits …, 2013 - ieeexplore.ieee.org
This brief presents a low-voltage subthreshold MOSFETs-based scattered relative
temperature sensor that uses a simple regulated current mirror structure. NMOSFETs in the …

A Subthreshold-MOSFETs-Based Scattered Relative Temperature Sensor Front-End With a Non-Calibrated Relative Inaccuracy From - to 100

L Lu, B Vosooghi, J Chen, C Li - IEEE Transactions on Circuits …, 2013 - ieeexplore.ieee.org
This paper presents a subthreshold MOSFETs-based scattered relative temperature sensor
front-end operating at a low supply voltage. Dynamic element matching and dynamic offset …

An evaluation of freshman engineering persistence using expectancy-value theory

CA McGrath, K Gipson, O Pierrakos… - 2013 IEEE Frontiers …, 2013 - ieeexplore.ieee.org
As we engage in an increasingly complex and quickly progressing world, the development
of science, technology, engineering, and mathematics (STEM) students will be increasingly …

A 40µW CMOS temperature sensor with an inaccuracy of±0.4° C (3σ) from− 55° C to 200° C

K Souri, K Souri, K Makinwa - 2013 Proceedings of the …, 2013 - ieeexplore.ieee.org
This paper describes a BJT-based precision CMOS temperature sensor for high temperature
(> 150° C) applications. By optimizing the bias currents of the sensing BJTs and the design …