Photonic integrated circuits fabricated using ion implantation

Intermixing of InP-based quantum dots and application to micro-ring resonator wavelength-selective filter for photonic integrated devices

A Matsumoto, A Matsushita, Y Takei… - Applied Physics …, 2014 - iopscience.iop.org
In this study, we investigated quantum dot intermixing (QDI) for InAs/InGaAlAs highly stacked
QDs on an InP (311) B substrate with low-temperature annealing at 650 C in order to realize …
被引用次数：16 相关文章 所有 5 个版本

Bandgap Engineering of InGaAsP/InP Multiple Quantum Well Structure by Dielectric Sputtering.

H Zhu, Y Zhuang, X Zhang, JJ He - PIERS Proceedings, 2014 - search.ebscohost.com
This paper investigates a method of Si< sub> 3 N< sub> 4 sputtering and annealing on
quantum well intermixing for bandgap engineering of InGaAsP/InP multiple quantum well …
被引用次数：1 相关文章