Power-modulated (pulsed) plasmas have demonstrated several advantages compared to
continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching …

Silicon nitride spacer etching realization is considered today as one of the most challenging
of the etch process for the new devices realization. For this step, the atomic etch precision to …

Molecular dynamics simulations of low-energy (5–100 eV) Cl+ and Cl 2+ bombardment on
(100) Si surfaces are performed to investigate the impact of plasma dissociation and very …

This work presents the graphoepitaxy of high-χ block copolymers (BCP) in standard industry-
like lithography stacks and their transfer into the silicon substrate The process includes …

The resurgence of industrial interest in pulsed radiofrequency plasmas for etching
applications highlights the fact that these plasmas are much less well characterized than …

Comparisons between measurements and spatially-averaged (0D) simulations of low-
pressure Ar and Cl 2 pulsed-plasmas in an industrial inductively coupled reactor are …

The best strategies to transfer nanoholes formed from the self-assembly of Polystyren/
Polymethylmethacrylate (PS/PMMA) based block copolymers into a silicon substrate are …

Particle-in-cell/Monte Carlo collision simulations, coupled with an external circuit, are used
to investigate the behavior of pulsed dual-frequency (DF) capacitively coupled plasmas …

Si 3 N 4 spacer etching processes are one of the most critical steps of transistor fabrication
technologies since they must be at the same time very anisotropic to generate straight …

The mechanism of highly selective etching by a pulsed-microwave electron-cyclotron-
resonance plasma was investigated by analyzing surface-reaction layers formed on …