Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter… - … status solidi (b), 2014 - Wiley Online Library
The structural and optical properties of GaAs1− xBix alloys for x up to 0.108 have been
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …
Experimental and theoretical studies of band gap alignment in GaAs1− xBix/GaAs quantum wells
R Kudrawiec, J Kopaczek, MP Polak… - Journal of Applied …, 2014 - pubs.aip.org
Band gap alignment in GaAs 1− x Bi x/GaAs quantum wells (QWs) was studied
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …
Low-and high-energy photoluminescence from GaSb1− xBix with 0< x≤ 0.042
J Kopaczek, R Kudrawiec, W Linhart… - Applied Physics …, 2014 - iopscience.iop.org
Two photoluminescence (PL) peaks were observed in temperature-dependent PL spectra of
GaSb 1− x Bi x layers with 0< x≤ 0.042. The high-energy (HE) peak was found to be …
GaSb 1− x Bi x layers with 0< x≤ 0.042. The high-energy (HE) peak was found to be …
Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
S Mazzucato, H Lehec, H Carrère, H Makhloufi… - Nanoscale Research …, 2014 - Springer
The exciton recombination processes in a series of elastically strained GaAsBi epilayers are
investigated by means of time-integrated and time-resolved photoluminescence at T= 10 K …
investigated by means of time-integrated and time-resolved photoluminescence at T= 10 K …
Thermal annealing effects on the optical and structural properties of (1 0 0) GaAs1− xBix layers grown by molecular beam epitaxy
OM Lemine, A Alkaoud, HVA Galeti, VO Gordo… - Superlattices and …, 2014 - Elsevier
The effects of long time thermal annealing at 200° C on the optical and structural properties
of GaAs 1− x Bi x alloys were investigated by X-ray diffraction (XRD), field emission …
of GaAs 1− x Bi x alloys were investigated by X-ray diffraction (XRD), field emission …
Photoluminescence at up to 2.4 μm wavelengths from GaInAsBi/AlInAs quantum wells
R Butkutė, V Pačebutas, B Čechavičius… - Journal of crystal …, 2014 - Elsevier
Abstract 5 nm, 10 nm and 20 nm-thick GaInAsBi quantum wells were grown on the InP: Fe
(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum …
(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum …
Temperature dependent double blueshift of photoluminescence peak position in MgZnO epitaxial layers
M Karaliunas, E Kuokstis, SY Ting, JJ Huang… - Journal of Applied …, 2014 - pubs.aip.org
Temperature dependent photoluminescence (PL) of MgZnO epitaxial layers with high Mg
content were studied to understand the effect of carrier localization on the PL dynamics …
content were studied to understand the effect of carrier localization on the PL dynamics …
Magneto-optical properties of GaBiAs layers
ARH Carvalho, VO Gordo, HVA Galeti… - Journal of Physics D …, 2014 - iopscience.iop.org
We have investigated the effect of long thermal annealing (3 h) at 200 C on the physical
properties of GaBiAs layers with a Bi concentration of 3% by using photoluminescence (PL) …
properties of GaBiAs layers with a Bi concentration of 3% by using photoluminescence (PL) …
Optical and Structural Properties of Emerging Dilute III-V Bismides
BH Santos, YG Gobatoa, M Heninib - Applied Science and …, 2014 - koreascience.kr
In this paper, we present a review of optical and structural studies of $ GaBi_xAs_ {1-x} $
epilayers grown by Molecular Beam Epitaxy (MBE) on (311) B and (001) GaAs substrates …
epilayers grown by Molecular Beam Epitaxy (MBE) on (311) B and (001) GaAs substrates …