Carrier time-of-flight measurement using a probe structure for direct evaluation of carrier transport in multiple quantum well solar cells
K Toprasertpong, N Kasamatsu, H Fujii… - IEEE Journal of …, 2014 - ieeexplore.ieee.org
Carrier transport across multiple quantum well (MQW) structures inserted in the i-region of a
pin diode is an important mechanism that determines the performance of MQW solar cells …
pin diode is an important mechanism that determines the performance of MQW solar cells …
The dependence of multijunction solar cell performance on the number of quantum dot layers
The performance improvements of adding InAs quantum dots (QDs) in the middle subcell of
a lattice matched triple-junction InGaP/InGaAs/Ge photovoltaic device are studied using the …
a lattice matched triple-junction InGaP/InGaAs/Ge photovoltaic device are studied using the …
Modeling nonuniform irradiance and chromatic aberration effects in a four junction solar cell using SPICE
P Sharma, M Wilkins, H Schriemer… - 2014 IEEE 40th …, 2014 - ieeexplore.ieee.org
A two-dimensional, distributed resistance model for a four junction solar cell is implemented
in SPICE. Efficiency estimates for Gaussian irradiance profiles with different peak-to-average …
in SPICE. Efficiency estimates for Gaussian irradiance profiles with different peak-to-average …
Effects of luminescent coupling in single-and 4-junction dilute nitride solar cells
MM Wilkins, AM Gabr, AH Trojnar… - 2014 IEEE 40th …, 2014 - ieeexplore.ieee.org
A novel method for incorporating the effects of luminescent coupling and photon recycling in
numerical simulations of planar devices is described. The carrier generation is incorporated …
numerical simulations of planar devices is described. The carrier generation is incorporated …
Carrier dynamics in quantum-dot multijunction solar cells under concentration
AW Walker, O Thériault, K Hinzer - IEEE Journal of …, 2014 - ieeexplore.ieee.org
The key performance metrics of quantum-dot (QD)-lattice-matched multijunction solar cells
(MJSCs) composed of InGaP/(In) GaAs/Ge with InAs/GaAs QDs are explored under high …
(MJSCs) composed of InGaP/(In) GaAs/Ge with InAs/GaAs QDs are explored under high …
[PDF][PDF] 4-junction solar cells with dilute nitrides: optimization with luminescent coupling
A 4-junction Ga0. 5In0. 5P/Al0. 05Ga0. 95As/InGaAsN (Sb)/Ge solar cell with a 0.90 eV
dilute nitride sub-cell has been modeled using a drift-diffusion based device simulator, and …
dilute nitride sub-cell has been modeled using a drift-diffusion based device simulator, and …
Croissance et caractérisation des boîtes quantiques InAs/GaAs pour des applications photovoltaïques
J Zribi - 2014 - library-archives.canada.ca
Ce travail de thèse porte sur l'étude de l'effet des boîtes quantiques d'InAs sur l'efficacité
de conversion des cellules solaires à simple jonction de GaAs crues par épitaxie par jets …
de conversion des cellules solaires à simple jonction de GaAs crues par épitaxie par jets …
Inverted Metamorphic III–V Triple‐Junction Solar Cell with a 1 eV CuInSe2 Bottom Subcell
AW Walker, F Bouchard, AH Trojnar… - International Journal of …, 2014 - Wiley Online Library
A new triple‐junction solar cell (3J) design exploiting the highly absorptive I–III–VI
chalcopyrite CuInSe2 material is proposed as an alternative to III–V semiconductor 3J solar …
chalcopyrite CuInSe2 material is proposed as an alternative to III–V semiconductor 3J solar …