Revisiting the doping requirement for low power junctionless MOSFETs
MS Parihar, A Kranti - Semiconductor Science and Technology, 2014 - iopscience.iop.org
In this work, we revisit the requirement of higher channel doping (≥ 10 19 cm− 3) in
junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (10 18 …
junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (10 18 …
Performance optimization and parameter sensitivity analysis of ultra low power junctionless mosfets
MS Parihar, A Kranti - … conference on VLSI design and 2014 …, 2014 - ieeexplore.ieee.org
The paper investigates the impact of doping concentration on the performance of Ultra Low
Power (ULP) Junctionless Double Gate MOSFETs. Results show that intrinsic delay is …
Power (ULP) Junctionless Double Gate MOSFETs. Results show that intrinsic delay is …
Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs
E Gu, G Hu, P Xiang, R Liu, L Wang, X Zhou - 2014 - dr.ntu.edu.sg
An analytical model for channel potential, subthreshold drain current, and subthreshold
swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The …
swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The …