Metal Protection Layer over SiN Encapsulation for Spin-Torque MRAM Device Applications
K Huang, C Yuan-Tung, T Zhong… - US Patent App. 13 …, 2014 - Google Patents
A magnetic thin film deposition is patterned and protected from oxidation during subsequent
processes, such as bit line formation, by an oxidation-prevention encapsulation layer of SiN …
processes, such as bit line formation, by an oxidation-prevention encapsulation layer of SiN …
Self aligned borderless contact
K Cheng, R Sreenivasan - US Patent 8,754,527, 2014 - Google Patents
A method of fabricating a semiconductor structure having a borderless contact, the method
including providing a first semiconductor device adjacent to a second semiconductor device …
including providing a first semiconductor device adjacent to a second semiconductor device …