Pulsed Cl2/Ar inductively coupled plasma processing: 0D model versus experiments
E Despiau-Pujo, M Brihoum, P Bodart… - Journal of Physics D …, 2014 - iopscience.iop.org
Comparisons between measurements and spatially-averaged (0D) simulations of low-
pressure Ar and Cl 2 pulsed-plasmas in an industrial inductively coupled reactor are …
pressure Ar and Cl 2 pulsed-plasmas in an industrial inductively coupled reactor are …
Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
R Blanc, F Leverd, M Darnon, G Cunge… - Journal of Vacuum …, 2014 - pubs.aip.org
Si 3 N 4 spacer etching processes are one of the most critical steps of transistor fabrication
technologies since they must be at the same time very anisotropic to generate straight …
technologies since they must be at the same time very anisotropic to generate straight …