A review of InP/InAlAs/InGaAs based transistors for high frequency applications
This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …
InP based devices for high speed applications. Over the past few decades, major aero …
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
The large-scale growth of semiconducting thin films forms the basis of modern electronics
and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub …
and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub …
Highly conductive all‐plastic electrodes fabricated using a novel chemically controlled transfer‐printing method
PEDOT: PSS nanofibrils accompanied by the removal of an excessive amount of PSS, which
also improved the durability and stability of the PEDOT: PSS films.[6] However, the necessity …
also improved the durability and stability of the PEDOT: PSS films.[6] However, the necessity …
Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si
III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI)
substrates by template-assisted selective epitaxy (TASE) using metal organic chemical …
substrates by template-assisted selective epitaxy (TASE) using metal organic chemical …
Thermally controlled, patterned graphene transfer printing for transparent and wearable electronic/optoelectronic system
Graphene has been highlighted as a platform material in transparent electronics and
optoelectronics, including flexible and stretchable ones, due to its unique properties such as …
optoelectronics, including flexible and stretchable ones, due to its unique properties such as …
Ultrashort channel length black phosphorus field-effect transistors
This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors
with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By …
with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By …
Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride
C Chen, Z Wang, T Kato, N Shibata, T Taniguchi… - Nature …, 2015 - nature.com
Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth.
Clarifying how the two seemingly incompressible materials can actually join represents one …
Clarifying how the two seemingly incompressible materials can actually join represents one …
Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap
N Collaert, A Alian, H Arimura, G Boccardi… - Microelectronic …, 2015 - Elsevier
In this work, we will give an overview of the innovations in materials and new device
concepts that will be needed to continue Moore's law to the sub-10 nm technology nodes. To …
concepts that will be needed to continue Moore's law to the sub-10 nm technology nodes. To …
High-performance, mechanically flexible, and vertically integrated 3D carbon nanotube and InGaZnO complementary circuits with a temperature sensor.
W Honda, S Harada, S Ishida, T Arie… - … (Deerfield Beach, Fla.), 2015 - europepmc.org
High-performance, mechanically flexible, and vertically integrated 3D carbon nanotube and
InGaZnO complementary circuits with a temperature sensor. - Abstract - Europe PMC Sign in …
InGaZnO complementary circuits with a temperature sensor. - Abstract - Europe PMC Sign in …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …