First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data

MP Polak, P Scharoch… - … Science and Technology, 2015 - iopscience.iop.org
Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …

Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study

J Kopaczek, WM Linhart, M Baranowski… - Semiconductor …, 2015 - iopscience.iop.org
Abstract Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied
to study the optical properties, particularly the localized and delocalized states and carrier …

Carrier masses and band-gap temperature sensitivity in Ga (AsBi) alloys

G Pettinari, M Capizzi, A Polimeni - Semiconductor Science and …, 2015 - iopscience.iop.org
The effects of external perturbations—such as temperature, photo-excited carrier density,
and magnetic field—on the electronic properties of Ga (AsBi) alloys are investigated in a …

Resonant and Time Resolved Spin Noise Spectroscopy of Electron Spin Dynamics in Semiconductors

BC Pursley - 2015 - search.proquest.com
Determining the spin properties of novel materials is necessary for the development of
proposed spin-based information processing devices, or spintronics. While existing optical …

Efeitos de localização de portadores em poços quânticos de GaBiAs/GaAs

ARH Carvalho - 2015 - repositorio.ufscar.br
Este trabalho tem como objetivo estudar as propriedades ópticas e de spin de poços
quânticos de GaBiAs/GaAs. Para isso, foram realizadas medidas de espectroscopia de …

[引用][C] Localization Effects in Disordered III-V Semiconductor Nanostructures

MK Shakfa - 2015 - Cuvillier Verlag