Tuneable four-wave mixing in AlGaAs nanowires
We have experimentally demonstrated broadband tuneable four-wave mixing in AlGaAs
nanowires with the widths ranging between 400 and 650 nm and lengths from 0 to 2 mm …
nanowires with the widths ranging between 400 and 650 nm and lengths from 0 to 2 mm …
[HTML][HTML] Fabrication of artificial graphene in a GaAs quantum heterostructure
D Scarabelli, S Wang, A Pinczuk, SJ Wind… - Journal of Vacuum …, 2015 - pubs.aip.org
The unusual electronic properties of graphene, which are a direct consequence of its two-
dimensional honeycomb lattice, have attracted a great deal of attention in recent years …
dimensional honeycomb lattice, have attracted a great deal of attention in recent years …
Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication
X Zhang, Y Togano, K Hashimura… - Japanese Journal of …, 2015 - iopscience.iop.org
We investigate inductively coupled plasma (ICP) deep dry etching of Al 0.8 Ga 0.2 As for
photonic crystal (PC) fabrication using a Cl 2/BCl 3/CH 4 gas mixture. On the basis of our …
photonic crystal (PC) fabrication using a Cl 2/BCl 3/CH 4 gas mixture. On the basis of our …
Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options
U Peralagu, X Li, O Ignatova, YC Fu, DAJ Millar… - ECS …, 2015 - iopscience.iop.org
Based on current projections, III-Vs are expected to replace Si as the n-channel solution in
FinFETs at the 7nm technology node. The realisation of III-V FinFETs entails top-down …
FinFETs at the 7nm technology node. The realisation of III-V FinFETs entails top-down …
Through cell vias contacts for multijunction solar cells
The efficiency of multijunction solar cells used in concentrated photovoltaic systems is
limited by shading from the grid line top electrode and electrical losses in the top epilayers …
limited by shading from the grid line top electrode and electrical losses in the top epilayers …
A highly efficient nonlinear platform: AlGaAs-On-Insulator
M Pu, L Ottaviano, E Semenova… - The European Conference …, 2015 - opg.optica.org
Integrated nonlinear photonics has recently drawn increasing research interests as it
provides a compact solution compared with the conventional fiber devices. Silicon-on …
provides a compact solution compared with the conventional fiber devices. Silicon-on …
Highly efficient four-wave mixing in an AlGaAs-on-insulator (AlGaAsOI) nano-waveguide
M Pu, L Ottaviano, E Semenova… - 2015 Conference on …, 2015 - ieeexplore.ieee.org
Highly efficient four-wave mixing in an AlGaAs-on-insulator (AlGaAsOI) nano-waveguide
Page 1 STu1I.3.pdf CLEO:2015 © OSA 2015 Highly Efficient Four-Wave Mixing in an …
Page 1 STu1I.3.pdf CLEO:2015 © OSA 2015 Highly Efficient Four-Wave Mixing in an …
Wybrane optyczne zjawiska nieliniowe w mikrostrukturach fotonicznych i ośrodkach magnetooptycznych
KA Rutkowska - Prace Naukowe Politechniki Warszawskiej. Fizyka, 2015 - infona.pl
W pracy przedstawiono opis wybranych zjawisk nieliniowych drugiego i trzeciego rzędu, w
których wykorzystywana jest zarówno specyfika struktur falowodowych wykonanych z …
których wykorzystywana jest zarówno specyfika struktur falowodowych wykonanych z …