Photonic materials, structures and devices for Reststrahlen optics
We present a review of existing and potential next-generation far-infrared (20-60 μm) optical
materials and devices. The far-infrared is currently one of the few remaining frontiers on the …
materials and devices. The far-infrared is currently one of the few remaining frontiers on the …
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band
This paper assesses intersubband (ISB) transitions in the 1–10 THz frequency range in
nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi …
nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi …
Dielectric absorption of s-polarized infrared light resonant to longitudinal optical phonon energy incident on lateral (0 0 0 1) GaN/Ti stripe structures
Y Ishitani, K Hatta, K Morita, B Ma - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
The interaction of a semiconductor surface or interface and p-polarized infrared (IR) light has
been investigated from the viewpoint of terahertz (THz) application. In this study the electric …
been investigated from the viewpoint of terahertz (THz) application. In this study the electric …
High throughput hot testing method and system for high-brightness light-emitting diodes
RW Solarz - US Patent 8,927,944, 2015 - Google Patents
A method of performing a hot test of a wafer-level, packaged high-brightness phosphor
converted light-emitting diode (pc-HBLED) includes selectively heating portions of the …
converted light-emitting diode (pc-HBLED) includes selectively heating portions of the …
Surface characterization and luminescence properties of AlN doped with RE elements (Sm, Ho, Gd, Tm)
IA Balogun - 2015 - qspace.qu.edu.qa
Rare‐earth (RE)‐doped III‐nitride broad band‐gap semiconductors have attracted
enormous interest as a foundation for optoelectronics devices, which combine the unique …
enormous interest as a foundation for optoelectronics devices, which combine the unique …