This paper assesses intersubband (ISB) transitions in the 1–10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi …
Y Ishitani, K Hatta, K Morita, B Ma - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
The interaction of a semiconductor surface or interface and p-polarized infrared (IR) light has been investigated from the viewpoint of terahertz (THz) application. In this study the electric …
RW Solarz - US Patent 8,927,944, 2015 - Google Patents
A method of performing a hot test of a wafer-level, packaged high-brightness phosphor converted light-emitting diode (pc-HBLED) includes selectively heating portions of the …
Rare‐earth (RE)‐doped III‐nitride broad band‐gap semiconductors have attracted enormous interest as a foundation for optoelectronics devices, which combine the unique …