Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing
R Wutzler, L Rebohle, S Prucnal, FL Bregolin… - Journal of Applied …, 2015 - pubs.aip.org
The integration of III–V compound semiconductors in Si is a crucial step towards faster and
smaller devices in future technologies. In this work, we investigate the formation process of …
smaller devices in future technologies. In this work, we investigate the formation process of …
Raman scattering study of LO phonon–plasmon coupled modes in p-type InGaAs
R Cuscó, N Domènech-Amador, PY Hung… - Journal of Alloys and …, 2015 - Elsevier
We present a Raman scattering study of LO phonon-coupled modes in Be-doped, p-type In
0.53 Ga 0.47 As with hole densities ranging from 2.2× 10 17 to 2.4× 10 19 cm− 3. Two …
0.53 Ga 0.47 As with hole densities ranging from 2.2× 10 17 to 2.4× 10 19 cm− 3. Two …
Observation of coherent phonon-plasma coupled modes in wide gap semiconductors by transmission pump-probe measurements
H Kunugita, K Hatashita, Y Ohkubo, T Okada… - Optics Express, 2015 - opg.optica.org
We have investigated coherent LO phonon properties in zinc-based II–VI widegap
semiconductors, focusing on phonon-plasma coupled modes. By a careful treatment of the …
semiconductors, focusing on phonon-plasma coupled modes. By a careful treatment of the …
Polaron-induced parametric interactions in semiconductors: influence of band nonparabolicity and carrier heating
R Agrawal, S Dubey, S Ghosh - Indian Journal of Physics, 2015 - Springer
The modified nonlinear wave dynamics due to band nonparabolicity and carrier heating,
arising from parametrically interacting electron–longitudinal optical phonons in a polar …
arising from parametrically interacting electron–longitudinal optical phonons in a polar …
Phonons in III-nitride thinfilms, bulk and nanowires: a closer look into InN vibrational properties
N Domènech i Amador - 2015 - diposit.ub.edu
[eng] This thesis is devoted to the study of the interactions of phonons in indium nitride (InN)
and materials of the (In, Ga) N system with wurtzite structure. For this purpose, we present …
and materials of the (In, Ga) N system with wurtzite structure. For this purpose, we present …