Graphene is the first engineering electronic material, which is purely two-dimensional: it
consists of two exposed sp 2-hybridized carbon surfaces and has no bulk. Therefore …

Ultrathin layered films in new transistors architectures (FinFET and fully depleted SOI)
require damage-free plasma etching techniques with unprecedented selectivity between …

The ion flux and ion velocity distribution function are studied using a capacitively coupled
radio frequency ion flux probe and a multigrid retarding field analyzer in an HBr/O 2 pulsed …

Almost electron-free (ion-ion) plasmas can be transiently formed during the afterglow phase
of pulsed plasmas in electronegative gases. In ion-ion plasmas, both positive and negative …

Controlling time averaged ion energy distribution (IED) is becoming increasingly important
in many plasma material processing applications for plasma etching and deposition. The …

To assist the development of plasma processes to pattern graphene in a controlled way,
interactions between hydrogen plasma species (H, H?, H2?) and various types of graphene …

Ce travail de thèse aborde le problème de la gravure de matériaux ultraminces pour la
réalisation de nouvelles générations de transistors (FDSOI, FinFET) dans les dispositifs …