Silicon nitride etching performance of CH2F2 plasma diluted with argon or krypton
Y Kondo, K Ishikawa, T Hayashi… - Japanese Journal of …, 2015 - iopscience.iop.org
Etching rates of silicon nitrides (SiN), SiO 2, and poly-Si films for CH 2 F 2 plasmas diluted
with rare gases are presented by comparing the effects of flow rates of CH 2 F 2 and dilution …
with rare gases are presented by comparing the effects of flow rates of CH 2 F 2 and dilution …
Hydrofluorocarbon ion density of argon-or krypton-diluted CH2F2 plasmas: generation of CH2F+ and CHF2+ by dissociative-ionization in charge exchange collisions
Y Kondo, Y Miyawaki, K Ishikawa… - Journal of Physics D …, 2015 - iopscience.iop.org
Ion densities of CH 2 F+ and CHF 2+ were determined by dissociative ionization pathways
in channels of charge exchange collisions, ie CH 2 F 2+ M+→ CH 2 F++ F+ M* and CHF 2++ …
in channels of charge exchange collisions, ie CH 2 F 2+ M+→ CH 2 F++ F+ M* and CHF 2++ …
Inductive couple plasma reactive ion etching characteristics of TiO2 thin films
AA Garay, SM Hwang, CW Chung - Thin Solid Films, 2015 - Elsevier
Abstract Changes in the inductively coupled plasma reactive ion etching characteristics of
TiO 2 thin films in response to the addition of HBr, Cl 2 and C 2 F 6 to Ar gas were …
TiO 2 thin films in response to the addition of HBr, Cl 2 and C 2 F 6 to Ar gas were …
[图书][B] Plasma etching processes for interconnect realization in VLSI
N Posseme - 2015 - books.google.com
This is the first of two books presenting the challenges and future prospects of plasma
etching processes for microelectronics, reviewing the past, present and future issues of …
etching processes for microelectronics, reviewing the past, present and future issues of …
[引用][C] Development and Characterization of metal oxide RRAM memory cells
M Barlas, Y Leblebici - 2015 - MSc Thesis, École Polytechnique …