Surface charge transfer doping of low‐dimensional nanostructures toward high‐performance nanodevices

X Zhang, Z Shao, X Zhang, Y He, J Jie - Advanced Materials, 2016 - Wiley Online Library
Device applications of low‐dimensional semiconductor nanostructures rely on the ability to
rationally tune their electronic properties. However, the conventional doping method by …

Synthesis of freestanding single-crystal perovskite films and heterostructures by etching of sacrificial water-soluble layers

D Lu, DJ Baek, SS Hong, LF Kourkoutis, Y Hikita… - Nature materials, 2016 - nature.com
The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly
had transformative impact on science and technology. In parallel with the exfoliation and …

Generalized colloidal synthesis of high-quality, two-dimensional cesium lead halide perovskite nanosheets and their applications in photodetectors

L Lv, Y Xu, H Fang, W Luo, F Xu, L Liu, B Wang… - Nanoscale, 2016 - pubs.rsc.org
All-inorganic cesium lead halide perovskite (CsPbX3, X= Cl, Br, and I) nanocrystals (NCs)
are emerging as an important class of semiconductor materials with superior photophysical …

Importance of molds for nanoimprint lithography: Hard, soft, and hybrid molds

B Kwon, JH Kim - Journal of Nanoscience, 2016 - Wiley Online Library
Nanoimprint lithography has attracted considerable attention in academic and industrial
fields as one of the most prominent lithographic techniques for the fabrication of the …

[PDF][PDF] Octopus-inspired smart adhesive pads for transfer printing of semiconducting nanomembranes

H Lee, DS Um, Y Lee, S Lim, H Kim, H Ko - Adv. Mater, 2016 - polympart.com
DOI: 10.1002/adma. 201601407 to control the pressure inside the suckers and thus the
pressure difference between the inside and outside of the suckers, resulting in the …

High-performance p-type black phosphorus transistor with scandium contact

L Li, M Engel, DB Farmer, S Han, HSP Wong - ACS nano, 2016 - ACS Publications
A record high current density of 580 μA/μm is achieved for long-channel, few-layer black
phosphorus transistors with scandium contacts after 400 K vacuum annealing. The …

Twin-induced InSb nanosails: A convenient high mobility quantum system

M De La Mata, R Leturcq, SR Plissard, C Rolland… - Nano …, 2016 - ACS Publications
Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for
realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum …

Free-standing two-dimensional single-crystalline InSb nanosheets

D Pan, DX Fan, N Kang, JH Zhi, XZ Yu, HQ Xu… - Nano …, 2016 - ACS Publications
Growth of high-quality single-crystalline InSb layers remains challenging in material science.
Such layered InSb materials are highly desired for searching for and manipulation of …

Ultra-high-throughput production of III-V/Si wafer for electronic and photonic applications

DM Geum, MS Park, JY Lim, HD Yang, JD Song… - Scientific reports, 2016 - nature.com
Si-based integrated circuits have been intensively developed over the past several decades
through ultimate device scaling. However, the Si technology has reached the physical …

Direct growth of single-crystalline III–V semiconductors on amorphous substrates

K Chen, R Kapadia, A Harker, S Desai… - Nature …, 2016 - nature.com
The III–V compound semiconductors exhibit superb electronic and optoelectronic properties.
Traditionally, closely lattice-matched epitaxial substrates have been required for the growth …