[PDF][PDF] Effects of high-k dielectric materials on electrical characteristics of DG n-FinFETs
This paper investigates the electrical characteristics of the nanoscale n-channel double gate
fin field-effect transistor (FinFET) structures and their sensitivity to gate dielectric materials …
fin field-effect transistor (FinFET) structures and their sensitivity to gate dielectric materials …
Two-dimensional analytical model for asymmetric dual-gate tunnel FETs
HF Xu, YH Dai, BG Guan… - Japanese Journal of …, 2016 - iopscience.iop.org
An analytical model for asymmetric dual-gate (ADG) tunnel field-effect transistors (TFETs)
combining a TFET with a junctionless field-effect transistor (JL FET) is presented and …
combining a TFET with a junctionless field-effect transistor (JL FET) is presented and …
A threshold voltage model for GaN-based heterostructure-free normally-off FinFET
H Qian, G Hu, R Liu, L Zheng… - 2016 13th IEEE …, 2016 - ieeexplore.ieee.org
An analytical model for threshold voltage of the normally-off GaN-based fin-shaped field-
effect transistor (FinFET) is obtained. Analytical expressions for the threshold voltage and its …
effect transistor (FinFET) is obtained. Analytical expressions for the threshold voltage and its …