The ability to achieve atomic layer precision is the utmost goal in the implementation of
atomic layer etch technology. Carbon-based materials such as carbon nanotubes (CNTs) …

To elucidate the pulsed fluorocarbon plasma behavior, a surface-wave probe with high time
resolution was used to measure the electron density ne in the afterglow of plasma. In a dual …

The mechanism of highly selective etching of SiO 2 using pulsed-microwave electron-
cyclotron-resonance plasma was investigated by analyzing the relationship between plasma …

The electron density, ne, modulation is measured experimentally using a resonance hairpin
probe in a pulsed, dual-frequency (2/13.56 MHz), dual-antenna, inductively coupled plasma …

Pulsed plasmas are promising candidates to go beyond limitations of continuous waves'
plasma. However, their interaction with surfaces remains poorly understood. The authors …

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide
(SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti …

Si FinFET scaling is getting more difficult due to extremely narrow fin width control and
power dissipation. Nanowire FETs and high mobility channel are attractive options for …

Plasma processing provides an important tool for the semiconductor manufacturing industry.
In particular, it is used extensively for surface processing of integrated circuits. Compared to …

Low temperature atmospheric pressure plasma devices are suitable experimental solutions
to generate transitory molecular environments with various applications. In this study we …

The effects of bias pulsing on a Si3N4 layer masked with multi-level hard mask (MLHM)
structures of KrF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer …