Photoacoustic spectroscopy of absorption edge for GaAsBi/GaAs nanowires grown on Si substrate
SJ Zelewski, J Kopaczek, WM Linhart… - Applied Physics …, 2016 - pubs.aip.org
GaAsBi/GaAs nanowires (NWs) grown on Si substrate and proper reference samples have
been studied by photoacoustic (PA) spectroscopy. It has been shown that PA signal …
been studied by photoacoustic (PA) spectroscopy. It has been shown that PA signal …
Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy
W Pan, L Zhang, L Zhu, Y Li, X Chen, X Wu… - Journal of Applied …, 2016 - pubs.aip.org
Photoluminescence (PL) properties of In 0.2 Ga 0.8 As/GaAs 0.96 Bi 0.04/In 0.2 Ga 0.8 As
quantum well (QW) grown on GaAs substrates by gas source molecular beam epitaxy were …
quantum well (QW) grown on GaAs substrates by gas source molecular beam epitaxy were …
Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1− xBix dilute bismide alloys
Ł Gelczuk, H Stokowski, J Kopaczek… - Journal of Physics D …, 2016 - iopscience.iop.org
Deep level transient spectroscopy (DLTS) has been applied to study electron and hole traps
in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap …
in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap …
Optical and spin properties of localized and free excitons in GaBixAs1− x/GaAs multiple quantum wells
MAG Balanta, J Kopaczek, VO Gordo… - Journal of Physics D …, 2016 - iopscience.iop.org
Raman spectroscopy and magneto-photoluminescence measurements under high magnetic
fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple …
fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple …
Caracterização óptica e magneto-óptica de filmes de GaPN
PBA Oliveira - 2016 - repositorio.ufscar.br
Este projeto de pesquisa propõe um estudo sistemático das propriedades ópticas e
magneto-ópticas de filmes semicondutores de GaPN crescidos pela técnica de Epitaxia por …
magneto-ópticas de filmes semicondutores de GaPN crescidos pela técnica de Epitaxia por …
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN
FS Covre - 2016 - repositorio.ufscar.br
Ligas semicondutoras III-V nitreto diluídas possuem propriedades físicas que as tornam
interessantes para aplicações em dispositivos optoeletrônicos. A possibilidade de casar liga …
interessantes para aplicações em dispositivos optoeletrônicos. A possibilidade de casar liga …