Selective epitaxy of InP on Si and rectification in graphene/InP/Si hybrid structure
The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a
central topic in (opto-) electronics owing to device applications. InP could open new …
central topic in (opto-) electronics owing to device applications. InP could open new …
Epitaxial growth of high In-content In0. 41Ga0. 59N/GaN heterostructure on (11–20) Al2O3 substrate
Growth characteristics of high Indium content InGaN/GaN heterostructure on a-plane (11 2¯
0) sapphire substrate by plasma assisted molecular beam epitaxy have been investigated in …
0) sapphire substrate by plasma assisted molecular beam epitaxy have been investigated in …
Temperature and doping dependence of the Raman scattering in 4H-SiC
Y Peng, X Hu, X Xu, X Chen, J Peng, J Han… - Optical Materials …, 2016 - opg.optica.org
Raman scattering spectra of 4H-SiC with different carrier concentrations were measured
from 90 K to 660 K. By using the improved empirical formula and the energy-time uncertainty …
from 90 K to 660 K. By using the improved empirical formula and the energy-time uncertainty …
Bismuth-content-dependent polarized Raman spectrum of InPBi alloy
We systematically investigate the optical properties of the InP 1− x Bi x ternary alloys with
0≤ x≤ 2.46%, by using high resolution polarized Raman scattering measurement. Both InP …
0≤ x≤ 2.46%, by using high resolution polarized Raman scattering measurement. Both InP …
Raman Spectroscopy
J Jimenez, JW Tomm, J Jimenez, JW Tomm - Spectroscopic Analysis of …, 2016 - Springer
Deals with lattice vibrations studied by Raman spectroscopy. First, a description of the
fundamentals of this technique is provided. Special emphasis is paid to a detailed …
fundamentals of this technique is provided. Special emphasis is paid to a detailed …