Computing in the dark silicon era: Current trends and research challenges

M Shafique, S Garg - IEEE Design & Test, 2016 - ieeexplore.ieee.org
Computing in the Dark Silicon Era: Current Trends and Research Challenges Page 1 2168-2356
(c) 2016 IEEE. Personal use is permitted, but republication/redistribution requires IEEE …

A 60 gops/w,− 1.8 v to 0.9 v body bias ulp cluster in 28 nm utbb fd-soi technology

D Rossi, A Pullini, I Loi, M Gautschi, FK Gürkaynak… - Solid-State …, 2016 - Elsevier
Ultra-low power operation and extreme energy efficiency are strong requirements for a
number of high-growth application areas, such as E-health, Internet of Things, and wearable …

[图书][B] Power Management Techniques for Integrated Circuit Design

KH Chen - 2016 - books.google.com
This book begins with the premise that energy demands are directing scientists towards ever-
greener methods of power management, so highly integrated power control ICs (integrated …

193 MOPS/mW@ 162 MOPS, 0.32 V to 1.15 V voltage range multi-core accelerator for energy efficient parallel and sequential digital processing

D Rossi, A Pullini, I Loi, M Gautschi… - … IEEE Symposium in …, 2016 - ieeexplore.ieee.org
Low power (mW) and high performance (GOPS) are strong requirements for compute-
intensive signal processing in E-health, Internet-of-Things, and wearable applications. This …

Near threshold voltage (NTV) computing: Computing in the dark silicon era

V De, S Vangal, R Krishnamurthy - IEEE Design & Test, 2016 - ieeexplore.ieee.org
Near-threshold computing has emerged as an attractive paradigm for energy efficiency. This
article discusses challenges and opportunities for designing complex system on chips that …

Ultra low voltage synthesizable memories: A trade-off discussion in 65 nm CMOS

O Andersson, B Mohammadi… - … on Circuits and …, 2016 - ieeexplore.ieee.org
In this study, design considerations for ultra low voltage (ULV) standard-cell based
memories (SCM) are presented. Trade-offs for area cost, leakage power, access time, and …

Challenges and designs of tfet for digital applications

ML Fan, YN Chen, P Su, CT Chuang - Tunneling Field Effect Transistor …, 2016 - Springer
This chapter reviews the challenges and designs of digital TFET circuits. Several
fundamental features of TFET such as unidirectional conduction, delayed saturation, and …

DynOR: A 32-bit microprocessor in 28 nm FD-SOI with cycle-by-cycle dynamic clock adjustment

J Constantin, A Bonetti, A Teman… - … Solid-State Circuits …, 2016 - ieeexplore.ieee.org
This paper presents DynOR, a 32-bit 6-stage Open-RISC microprocessor with dynamic clock
adjustment. To alleviate the issue of unused dynamic timing margins, the clock period of the …

ScalCore: Designing a core for voltage scalability

B Gopireddy, C Song, J Torrellas… - … Symposium on High …, 2016 - ieeexplore.ieee.org
Upcoming multicores need to provide increasingly stringent energy-efficient execution
modes. Currently, energy efficiency is attained by lowering the voltage (V dd) through DVFS …

Subthreshold operation of CAAC-IGZO FPGA by overdriving of programmable routing switch and programmable power switch

M Kozuma, Y Okamoto, T Nakagawa… - … Transactions on Very …, 2016 - ieeexplore.ieee.org
A field-programmable gate array (FPGA) using a crystalline oxide semiconductor of c-axis-
aligned crystal indium-gallium-zinc oxide (CAAC-IGZO) has been developed, which is …