Polarized Raman backscattering selection rules for (hhl)-oriented diamond-and zincblende-type crystals
Due to their interesting orientation-dependent properties, the ability to grow high-index
semiconductor crystals and nanostructures extends the design palette for applications …
semiconductor crystals and nanostructures extends the design palette for applications …
Prediction of quantum anomalous Hall Insulator in half-fluorinated GaBi honeycomb
SP Chen, ZQ Huang, CP Crisostomo, CH Hsu… - Scientific reports, 2016 - nature.com
Using first-principles electronic structure calculations, we predict half-fluorinated GaBi
honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase …
honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase …
GaAsBi/GaAs MQWs MBE growth on (411) GaAs substrate
PK Patil, F Ishikawa, S Shimomura - Superlattices and Microstructures, 2016 - Elsevier
Abstract Eleven periods of GaAsBi/GaAs multiple quantum wells (MQWs) grown on (411) A
and (411) B GaAs substrates at T GaAsBi= 350° C and T GaAs= 550° C by molecular beam …
and (411) B GaAs substrates at T GaAsBi= 350° C and T GaAs= 550° C by molecular beam …
Effect of growth parameters on the properties of GaAsBi
J Hilska - 2016 - trepo.tuni.fi
In this thesis the properties of GaAsBi structures are investigated with respect to their growth
parameters in molecular beam epitaxy. The GaAsBi alloy is a novel III-V semiconductor …
parameters in molecular beam epitaxy. The GaAsBi alloy is a novel III-V semiconductor …
[PDF][PDF] Improved Optical Quality and 1.26 μm Light Emission from (411) GaAsBi/GaAs MQWs Grown by MBE
P Patil, F Ishikawa, S Shimomura - csmantech.org
Abstract We have grown GaAsBi/GaAs MQWs on GaAs (411) A and (411) B substrates by
MBE and investigated arsenic pressure dependence of the Bi concentration of GaAsBi …
MBE and investigated arsenic pressure dependence of the Bi concentration of GaAsBi …