Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses
In an increasingly data-rich world the need for developing computing systems that cannot
only process, but ideally also interpret big data is becoming continuously more pressing …
only process, but ideally also interpret big data is becoming continuously more pressing …
Analog memristive synapse in spiking networks implementing unsupervised learning
Emerging brain-inspired architectures call for devices that can emulate the functionality of
biological synapses in order to implement new efficient computational schemes able to …
biological synapses in order to implement new efficient computational schemes able to …
[HTML][HTML] Real-time encoding and compression of neuronal spikes by metal-oxide memristors
Advanced brain-chip interfaces with numerous recording sites bear great potential for
investigation of neuroprosthetic applications. The bottleneck towards achieving an efficient …
investigation of neuroprosthetic applications. The bottleneck towards achieving an efficient …
Emulating short-term synaptic dynamics with memristive devices
Neuromorphic architectures offer great promise for achieving computation capacities
beyond conventional Von Neumann machines. The essential elements for achieving this …
beyond conventional Von Neumann machines. The essential elements for achieving this …
Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices
The resistance switching dynamics of TiN/HfO 2/Pt devices is analyzed in this paper. When
biased with a voltage ramp of appropriate polarity, the devices experience SET transitions …
biased with a voltage ramp of appropriate polarity, the devices experience SET transitions …
High density crossbar arrays with sub-15 nm single cells via liftoff process only
A Khiat, P Ayliffe, T Prodromakis - Scientific reports, 2016 - nature.com
Emerging nano-scale technologies are pushing the fabrication boundaries at their limits, for
leveraging an even higher density of nano-devices towards reaching 4F2/cell footprint in 3D …
leveraging an even higher density of nano-devices towards reaching 4F2/cell footprint in 3D …
Engineering the switching dynamics of TiOx-based RRAM with Al doping
Titanium oxide (TiO x) has attracted a lot of attention as an active material for resistive
random access memory (RRAM), due to its versatility and variety of possible crystal phases …
random access memory (RRAM), due to its versatility and variety of possible crystal phases …
Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer
JJ Wu, C Ye, J Zhang, T Deng, P He, H Wang - Materials Science in …, 2016 - Elsevier
Abstract We fabricated TiN/Hf: SiO 2/Pt memory cell with the small size of 1× 1 um 2 by
lithography and sputtering technology, which demonstrated excellent bipolar resistive …
lithography and sputtering technology, which demonstrated excellent bipolar resistive …
Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates
Abstract Pt/TiO x/Pt resistive switching (RS) devices are considered to be amongst the most
promising candidates in memristor family and the technology transfer to flexible substrates …
promising candidates in memristor family and the technology transfer to flexible substrates …
An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin
Resistive random access memory (ReRAM) crossbar arrays have become one of the most
promising candidates for next-generation non volatile memories. To become a mature …
promising candidates for next-generation non volatile memories. To become a mature …