Hydrogen plasmas processing of graphene surfaces
E Despiau-Pujo, A Davydova, G Cunge… - Plasma Chemistry and …, 2016 - Springer
To assist the development of plasma processes to pattern graphene in a controlled way,
interactions between hydrogen plasma species (H, H+, H 2+) and various types of graphene …
interactions between hydrogen plasma species (H, H+, H 2+) and various types of graphene …
Roughness generation during Si etching in Cl2 pulsed plasma
O Mourey, C Petit-Etienne, G Cunge… - Journal of Vacuum …, 2016 - pubs.aip.org
Pulsed plasmas are promising candidates to go beyond limitations of continuous waves'
plasma. However, their interaction with surfaces remains poorly understood. The authors …
plasma. However, their interaction with surfaces remains poorly understood. The authors …
Measuring ion velocity distribution functions through high-aspect ratio holes in inductively coupled plasmas
G Cunge, M Darnon, J Dubois, P Bezard… - Applied Physics …, 2016 - pubs.aip.org
Several issues associated with plasma etching of high aspect ratio structures originate from
the ions' bombardment of the sidewalls of the feature. The off normal angle incident ions are …
the ions' bombardment of the sidewalls of the feature. The off normal angle incident ions are …