Gate-tunable spin exchange interactions and inversion of magnetoresistance in single ferromagnetic ZnO nanowires

V Modepalli, MJ Jin, J Park, J Jo, JH Kim, JM Baik… - ACS …, 2016 - ACS Publications
Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of
nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a …

[HTML][HTML] Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

KR Sapkota, W Chen, FS Maloney, U Poudyal… - Scientific Reports, 2016 - nature.com
We report magnetoresistance (MR) manipulation and sign reversal induced by carrier
concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive …

[PDF][PDF] Gate-Tunable Magnetotransport in Ferromagnetic ZnO Nanowire FET Devices

V Modepalli - 2016 - core.ac.uk
Electrical manipulation of magnetization has grown as an essential ingredient in rapidly
evolving spintronic research. Switching of nano-scale magnetization can be induced by a …