[HTML][HTML] Trends and challenges in neuroengineering: toward “intelligent” neuroprostheses through brain-“brain inspired systems” communication

S Vassanelli, M Mahmud - Frontiers in neuroscience, 2016 - frontiersin.org
Future technologies aiming at restoring and enhancing organs function will intimately rely on
near-physiological and energy-efficient communication between living and artificial …

Logic design within memristive memories using memristor-aided loGIC (MAGIC)

N Talati, S Gupta, P Mane… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Realizing logic operations within passive crossbar memory arrays is a promising approach
to enable novel computer architectures, different from conventional von Neumann …

Self-adaptive spike-time-dependent plasticity of metal-oxide memristors

M Prezioso, F Merrikh Bayat, B Hoskins, K Likharev… - Scientific reports, 2016 - nature.com
Metal-oxide memristors have emerged as promising candidates for hardware
implementation of artificial synapses–the key components of high-performance, analog …

Implementation of memristive neural network with full-function pavlov associative memory

X Liu, Z Zeng, S Wen - … Transactions on Circuits and Systems I …, 2016 - ieeexplore.ieee.org
In this paper, implementation of memristive neural network with full-function Pavlov
associative memory is designed based on a proposed associative memory rule. The …

Generalized boundary condition memristor model

A Ascoli, F Corinto, R Tetzlaff - International Journal of Circuit …, 2016 - Wiley Online Library
SUMMARY A number of resistive switching memories exhibit activation‐based dynamical
behavior, which makes them suitable for neuromorphic and programmable analog filtering …

Computation of boolean formulas using sneak paths in crossbar computing

SK Jha, DE Rodriguez, JE Van Nostrand… - US Patent …, 2016 - Google Patents
Memristor-based nano-crossbar computing is a revolutionary computing paradigm that does
away with the traditional Von Neumann architectural separation of memory and computation …

Modeling valance change memristor device: Oxide thickness, material type, and temperature effects

H Abunahla, B Mohammad, D Homouz… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This paper presents a physics-based mathematical model for anionic memristor devices.
The model utilizes Poisson-Boltzmann equation to account for temperature effect on device …

Analog emulator of genuinely floating memcapacitor with piecewise-linear constitutive relation

D Biolek, V Biolková, Z Kolka, J Dobeš - Circuits, Systems, and Signal …, 2016 - Springer
This paper presents a method for emulating floating memcapacitors with piecewise-linear
constitutive relations between time-domain integrals of voltage and charge. The emulation is …

The bipolar and unipolar reversible behavior on the forgetting memristor model

L Chen, C Li, T Huang, X Hu, Y Chen - Neurocomputing, 2016 - Elsevier
In the further study of our previous forgetting model in Chen et al.(2013)[27], we found that
the three dimensional (3D) model can be a more general mathematical model compared …

Window functions and sigmoidal behaviour of memristive systems

PS Georgiou, SN Yaliraki, EM Drakakis… - … Journal of Circuit …, 2016 - Wiley Online Library
A common approach to model memristive systems is to include empirical window functions
to describe edge effects and nonlinearities in the change of the memristance. We …